Nihon Inter Electronics C30T10Q
Schottky Barrier Diode
| Part No. | C30T10Q |
|---|---|
| Datasheet | C30T10Q Download |
| Manufacturer |  Nihon Inter Electronics |
| Description | Schottky Barrier Diode |
| Buy | Stock & Price |
FEATURES
*SQUARE-PAK TO-263AB(SMD) Packaged in 24mm Tape and Reel *Dual Diodes – Cathode Common *Low Forward Voltage Drop *High Surge Capability *Tj=150 °C operation OUTLINE DRAWINGMAXIMUM RATINGS
Rating Repetitive Peak Reverse Voltage Average Rectified Output Current RMS Forward Current Surge Forward Current Operating JunctionTemperature Range Storage Temperature Range Symbol VRRM IO IF(RMS) IFSM Tjw Tstg Approx Net Weight: 1.4g C30T10Q 100 30 Tc=105°C 50 Hz Full Sine Wave Resistive Load 33.3 250 50Hz Full Sine Wave ,1cycle Non-repetitive -40 to +150 -40 to +150 Unit V A A A °C °C Electrical● Thermal Characteristics Characteristics Peak Reverse Current Peak Forward Voltage Thermal Resistance Symbol Conditions IRM Tj= 25°C, VRM= VRRM per arm VFM Tj= 25°C, IFM= 15 A per arm Rth(j-c) Junction to Case Min. Typ. Max. Unit - - 2 mA - - 0.88 V - - 1.5 °C /W C_T_ OUTLINE DRAWING (Dimensions in mm) INSTANTANEOUS FORWARD CURRENT (A) 100 50 20 10 5 2 1 0 FORWARD CURRENT VS. VOLTAGE C30T10Q/C30...
