Nihon Inter Electronics ESL03B03-F
Schottky Barrier Diode
FEATURES
* TO-252AA Case, Surface Mounting Device * Extremely Low Forward Voltage drop * Low Power Loss * High Surge Capability * Packaged in 16mm Tape and ReelMAXIMUM RATINGS
Rating Repetitive Peak Reverse Voltage Average Rectified Output Current RMS Forward Current Surge Forward Current Operating JunctionTemperature Range Storage Temperature Range Symbol VRRM IO IF(RMS) IFSM Tjw Tstg Approx Net Weight:0.30g ESL03B03-F 3.0 30 50Hz Half Sine Wave Tc=82°C Resistive Load 4.71 50Hz Half Sine Wave,1cycle, Non-repetitive - 40 to + 100 - 40 to + 125 Unit V A A A °C °C 45 Electrical● Thermal Characteristics Characteristics Peak Reverse Current Peak Forward Voltage Thermal Resistance Junction to Case Symbol Conditions Min Typ Max 3.0 0.47 6 Unit mA V °C/W IRM Tj=25°C,VRM=VRRM VFM Tj=25°C,IFM= 3 A Rth(j-c) - Datasheet pdf - ESL03B03-F OUTLINE DRAWING (Dimensions in mm) 4 2 1 3 4 1 2 3 Datasheet pdf - FORWARD CURRENT VS. VOLTAGE 10ms Sine Wave Single Pulse 20 ESL03B03/ESL03B03-F INSTANTANEOUS...