Nihon Inter Electronics FCH30B10
Schottky Barrier Diode
FEATURES
*TO-220AB Case *Fully Molded *Dual Diodes – Cathode Common *Low Forward Voltage Drop *High Surge Capability *Tj=150 °C operationMAXIMUM RATINGS
Rating Repetitive Peak Reverse Voltage Average Rectified Output Current RMS Forward Current Surge Forward Current Operating JunctionTemperature Range Storage Temperature Range Mounting torque Characteristics Peak Reverse Current Peak Forward Voltage Thermal Resistance Approx Net Weight: 1.75g Symbol VRRM IO IF(RMS) IFSM Tjw Tstg Ftor Symbol IRM 30 33.3 150 FCH30B10 Tc=97°C 100 50 Hz Full Sine Wave Resistive Load Unit V A A 50Hz Full Sine Wave ,1cycle Non-repetitive -40 to +150 -40 to +150 recommended torque = 0.5 Conditions Min. Typ. Max. 1 0.96 1.5 1.5 A °C °C N●m Unit mA V °C /W °C /W Electrical● Thermal Characteristics Tj= 25°C, VRM= VRRM per Arm Tj= 25°C, IFM= 15 A VFM per Arm Rth(j-c) Junction to Case Rth(c-f) Cace to Fin Datasheet pdf - FCHxxB OUTLINE DRAWING (Dimentions in mm) Datasheet pdf - FORWARD CURRENT VS. VOLTAGE FCH30B...