Nihon Inter Electronics P2HM1102H
MOSFET
| Part No. | P2HM1102H |
|---|---|
| Datasheet | P2HM1102H Download |
| Manufacturer |  Nihon Inter Electronics |
| Description | MOSFET |
| Buy | Stock & Price |
MAXIMUM RATINGS
Rating Symbol Drain-Source Voltage VDSS VGS=0V Gate-Source Voltage Continuous Drain Current Duty=50% D.C. VGSS ID Pulsed Drain Current IDM Total Power Dissipation PD Operating Junction Temperature Range Tjw Storage Temperature Range Tstg RMS Isolation Voltage Mounting Torque 1 Viso - Ftor 3.0 2.0 Approximate Weight :220g Grade PDM1102H / P2HM1102H 250 20 110 c=25 80 c=25 220 c=25 420 c=25 40 +150 40 +125 2000 ,AC1 Terminals to Base, AC 1 min . Module Base to Heat sink Bus bar to Main Terminals Unit V V A A W V Nm DRAIN CURRENT ID (A) 240 200 160 120 80 40 0 0 2 4 6 8 10 DRAIN TO SOURCE VOLTAGE VDS (V) DRAIN TO SOURCE ON VOLTAGE VDS (on)(V) 8 6 4 2 0 0 4 8 12 16 GATE TO SOURCE VOLTAGE VGS (V) DRAIN TO SOURCE ON VOLTAGE VDS (on)(V) 12 10 8 6 4 2 0 -40 0 40 80 120 160 JUNCTION TEMPERATURE Tj ( ) CAPACITANCE C (nF) 30 24 18 12 6 0 12 5 10 20 50 100 DRAIN TO SOURCE VOLTAGE VDS (V) GATE TO SOURCE VOLTAGE VGS (V) 16 5 SWITCHING TIME t ( s) 2 12 1 8 0.5 4 0 0 100 200 300 400 50...
