Nihon Inter Electronics PBMB150A6
IGBT MODULE
ELECTRICAL CHARACTERISTICS
(Tc=25°C) Characteristic Collector-Emitter Cut-Off Current Gate-Emitter Leakage Current Collector-Emitter Saturation Voltage Gate-Emitter Threshold Voltage Input Capacitance Rise Time Turn-on Time Switching Time Fall Time Turn-off Time Symbol ICES IGES VCE(sat) VGE(th) Cies tr ton tf toff Test Condition VCE=600V,VGE=0V VGE=+/- 20V,VCE=0V IC=150A,VGE=15V VCE=5V,IC=150mA VCE=10V,VGE=0V,f=1MHz VCC= 300V RL= 2 ohm RG= 5.1 ohm VGE= +/- 15V Min. 4.0 - Typ. 2.1 15,000 0.15 0.25 0.2 0.45 Max. 2.0 1.0 2.6 8.0 0.3 0.4 0.35 0.7 Unit mA µA V V pF µs FREE WHEELING DIODES RATINGS & CHARACTERISTICS (Tc=25°C) Item Symbol Rated Value Forward Current DC 1 ms IF IFM 150 300 Unit A Typ. 1.9 0.15 Characteristic Peak Forward Voltage Reverse Recovery Time Symbol VF trr Test Condition IF=150A,VGE=0V IF=150A,VGE=-10V,di/dt=150A/µs Min. - Max. 2.4 0.25 Unit V µs Unit °C/W THERMAL CHARACTERISTICS Characteristic Thermal Impedance IGBT DIODE Symbol Rth(j-c) Test Condition Junction to Case Min. - Typ. - Max.