Nihon Inter Electronics PBMB150B12
IGBT MODULE
| Part No. | PBMB150B12 |
|---|---|
| Datasheet | PBMB150B12 Download |
| Manufacturer |  Nihon Inter Electronics |
| Description | IGBT MODULE |
| Buy | Stock & Price |
ELECTRICAL CHARACTERISTICS
(Tc=25°C) Characteristic Collector-Emitter Cut-Off Current Gate-Emitter Leakage Current Collector-Emitter Saturation Voltage Gate-Emitter Threshold Voltage Input Capacitance Rise Time Turn-on Time Switching Time Fall Time Turn-off Time Symbol ICES IGES VCE(sat) VGE(th) Cies tr ton tf toff Test Condition VCE=1200V,VGE=0V VGE=+/- 20V,VCE=0V IC=150A,VGE=15V VCE=5V,IC=150mA VCE=10V,VGE=0V,f=1MHz VCC= 600V RL= 4 ohm RG= 3.6 ohm VGE= +/- 15V Min. 4.0 - Typ. 1.9 12600 0.25 0.40 0.25 0.80 Max. 3.0 1.0 2.4 8.0 0.45 0.70 0.35 1.10 Unit mA µA V V pF µs FREE WHEELING DIODES RATINGS & CHARACTERISTICS (Tc=25°C) Item Symbol Rated Value Forward Current DC 1 ms IF IFM 150 300 Unit A Typ. 1.9 0.2 Characteristic Peak Forward Voltage Reverse Recovery Time Symbol VF trr Test Condition IF=150A,VGE=0V IF=150A,VGE=-10V,di/dt=300A/µs Min. - Max. 2.4 0.3 Unit V µs Unit °C/W THERMAL CHARACTERISTICS Characteristic Thermal Impedance IGBT DIODE Symbol Rth(j-c) Test Condition Junction to Case Min. - Typ. - Max.
