Nihon Inter Electronics PBMB75B12
IGBT MODULE
| Part No. | PBMB75B12 |
|---|---|
| Datasheet | PBMB75B12 Download |
| Manufacturer |  Nihon Inter Electronics |
| Description | IGBT MODULE |
| Buy | Stock & Price |
ELECTRICAL CHARACTERISTICS
(Tc=25°C) Characteristic Collector-Emitter Cut-Off Current Gate-Emitter Leakage Current Collector-Emitter Saturation Voltage Gate-Emitter Threshold Voltage Input Capacitance Rise Time Turn-on Time Switching Time Fall Time Turn-off Time Symbol ICES IGES VCE(sat) VGE(th) Cies tr ton tf toff Test Condition VCE=1200V,VGE=0V VGE=+/- 20V,VCE=0V IC=75A,VGE=15V VCE=5V,IC=75mA VCE=10V,VGE=0V,f=1MHz VCC= 600V RL= 8 ohm RG= 13 ohm VGE= +/- 15V Min. 4.0 - Typ. 1.9 6300 0.25 0.40 0.25 0.80 Max. 2.0 1.0 2.4 8.0 0.45 0.70 0.35 1.00 Unit mA µA V V pF µs FREE WHEELING DIODES RATINGS & CHARACTERISTICS (Tc=25°C) Item Symbol Rated Value Forward Current DC 1 ms IF IFM 75 150 Unit A Typ. 1.9 0.2 Characteristic Peak Forward Voltage Reverse Recovery Time Symbol VF trr Test Condition IF=75A,VGE=0V IF=75A,VGE=-10V,di/dt=150A/µs Min. - Max. 2.4 0.3 Unit V µs Unit °C/W THERMAL CHARACTERISTICS Characteristic Thermal Impedance IGBT DIODE Symbol Rth(j-c) Test Condition Junction to Case Min. - Typ. - Max.
