Nihon Inter Electronics PHM5601
560A 150V MOSFET MODULE
FEATURES
* Trench Gate MOS FET Module Single 560A /150V OUTLINE DRAWING PHM5601 * Super Low Rds(ON) 2 milliohms( @560A ) * With Fast Recovery Source-Drain Diode CircuitTYPICAL APPLICATIONS
* Chopper Control For FORKLIFTs MAXMUM RATINGS Ratings Drain-Source Voltage (VGS=0V) Gate - Source Voltage Continuous Drain Current Duty=50% D.C. Approximate Weight : 650g Symbol VDSS VGSS ID IDM PD Tjw Tstg VISO FTOR M4 M8 PHM5601 150 +/ - 20 560 (Tc=25°C) 440 (Tc=25°C) 1,120 Tc=25°C) 1,780 Tc=25°C) -40 to +150 -40 to +125 2,500 3.0 1.4 10.5 Unit V V A N●mELECTRICAL CHARACTERISTICS
(@Tc=25°C unless otherwise noted) Characteristic Symbol Test Condition Zero Gate Voltage Drain Current Gate-Source Leakage Current Gate-Source Threshold Voltage Static Drain-Source On-Resistance Drain-Source On-Voltage Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Rise Time Turn-On Delay Time Fall Time Turn-Off Delay Time IDSS IGSS VGS(th) rDS(on) VDS(on) gfs Cies Coss Crss t...