P0660ETFS - N-Channel MOSFET

NIKO-SEM

Download the P0660ETFS datasheet PDF. This datasheet also covers the P0660ETF-NIKO variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

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P0660ETFS n-channel mosfet by NIKO-SEM - Datasheet Preview — Note: The manufacturer provides a single datasheet file (P0660ETF-NIKO-SEM.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	P0660ETFS
Manufacturer	NIKO-SEM
File Size	183.73 KB
Description	N-Channel MOSFET
Datasheet	P0660ETFS Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
P0660ETFS	N-Channel MOSFET	UNIKC
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P0660EI	N-Channel MOSFET	UNIKC
P0660AS	N-Channel MOSFET	UNIKC
P0660AT	N-Channel MOSFET	UNIKC

Other Datasheets by NIKO-SEM

Part Number	Description
P0660ETF	N-Channel MOSFET
P0603BDG	N-Channel MOSFET
P0603BKE	N-Channel FET
P0603YK	Dual N-Channel FET
P0610BT	N-Channel Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

NIKO-SEM N-Channel Enhancement Mode Field Effect Transistor P0660ETF:TO-220F P0660ETFS:TO-220FS Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) 600V 1.3Ω ID 6A D G S ABSOLUTE MAXIMUN RATINGS(TA=25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current2 Pulsed Drain Current1 Avalanche Current 3 Avalanche Energy3 TC = 25 °C TC = 100 °C Power Dissipation TC = 25 °C TC = 100 °C Operating Junction & Storage Temperature Range VDS VGS ID IDM IAS EAS PD Tj, Tstg 1 23 1. GATE 2. DRAIN 3. SOURCE LIMITS 600 ±30 6 3.8 20 3.5 61.