P1020HDB - N-Channel Enhancement Mode Field Effect Transistor

NIKO-SEM

Download the P1020HDB datasheet PDF. This datasheet also covers the P1020HDB-NIKO variant, as both devices belong to the same n-channel enhancement mode field effect transistor family and are provided as variant models within a single manufacturer datasheet.

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P1020HDB n-channel enhancement mode field effect transistor by NIKO-SEM - Datasheet Preview — Note: The manufacturer provides a single datasheet file (P1020HDB-NIKO-SEM.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	P1020HDB
Manufacturer	NIKO-SEM
File Size	194.57 KB
Description	N-Channel Enhancement Mode Field Effect Transistor
Datasheet	P1020HDB Datasheet

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Other Datasheets by NIKO-SEM

Part Number	Description
P1003BKA	N-Channel FET
P1004BD	N-Channel Enhancement Mode Field Effect Transistor
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P1006BK	N-Channel MOSFET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NIKO-SEM N-Channel Enhancement Mode P1020HDB Field Effect Transistor TO-252 Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) 200V 325mΩ ID 10A D G S ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current1 Avalanche Current Avalanche Energy Power Dissipation Junction & Storage Temperature Range TC = 25 ° C TC = 100 ° C L = 1mH TC = 25 ° C TC = 100 ° C VDS VGS ID IDM IAS EAS PD TJ, Tstg THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL Junction-to-Ambient RJA Junction-to-Case RJC 1Pulse width limited by maximum junction temperature. TYPICAL 1: GATE 2: DRAIN 3: SOURCE LIMITS 200 ±20 10 6.3 26 6.5 21.