P1306EK - P-Channel Enhancement Mode Field Effect Transistor

NIKO-SEM

Download the P1306EK datasheet PDF. This datasheet also covers the P1306EK-NIKO variant, as both devices belong to the same p-channel enhancement mode field effect transistor family and are provided as variant models within a single manufacturer datasheet.

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P1306EK p-channel enhancement mode field effect transistor by NIKO-SEM - Datasheet Preview — Note: The manufacturer provides a single datasheet file (P1306EK-NIKO-SEM.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	P1306EK
Manufacturer	NIKO-SEM
File Size	352.95 KB
Description	P-Channel Enhancement Mode Field Effect Transistor
Datasheet	P1306EK Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NIKO-SEM P-Channel Logic Level Enhancement Mode P1306EK Field Effect Transistor PDFN 5x6P Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) -60V 13.5mΩ ID -43A D G S D DDD #1 S S S G G. GATE D. DRAIN S. SOURCE 100% UIS Tested 100% Rg Tested ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Drain-Source Voltage Gate-Source Voltage TC = 25 °C Continuous Drain Current TC = 100 °C TA = 25 °C Pulsed Drain Current1 TA = 70 °C Avalanche Current Avalanche Energy L = 0.1mH TC = 25 °C Power Dissipation3 TC = 100 °C TA = 25 °C TA = 70 °C Operating Junction & Storage Temperature Range VDS VGS ID IDM IAS EAS PD Tj, Tstg LIMITS -60 ±25 -43 -27 -10 -8.3 -149 -52 135 48 19 2.7 1.