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P3004ND5G - N- & P-Channel Enhancement Mode Field Effect Transistor

Download the P3004ND5G datasheet PDF. This datasheet also covers the P3004ND5G-NIKO variant, as both devices belong to the same n- & p-channel enhancement mode field effect transistor family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (P3004ND5G-NIKO-SEM.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number P3004ND5G
Manufacturer NIKO-SEM
File Size 1.08 MB
Description N- & P-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet P3004ND5G Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NIKO-SEM N- & P-Channel Enhancement Mode Field Effect Transistor P3004ND5G TO-252-5 Halogen-Free & Lead-Free PRODUCT SUMMARY S2 G2 V(BR)DSS N-Channel P-Channel 40 -40 RDS(ON) 30mΩ 55mΩ ID 12A -8.8A G1 D1/D2 D1 G2 D2 S1 S2 G : GATE D : DRAIN S : SOURCE ABSOLUTE MAXIMUM RATINGS (T A = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current Avalanche Energy Power Dissipation Junction & Storage Temperature Range Lead Temperature ( /16” from case for 10 sec.) THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1 2 1 1 SYMBOL VDS VGS N-Channel P-Channel UNITS 40 ±20 12 8 50 19 20 3 2.1 -55 to 150 275 °C -40 ±20 -8.8 -5.