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P3506ETF - P-Channel Field Effect Transistor

This page provides the datasheet information for the P3506ETF, a member of the P3506ETF-NIKO P-Channel Field Effect Transistor family.

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Datasheet Details

Part number P3506ETF
Manufacturer NIKO-SEM
File Size 158.96 KB
Description P-Channel Field Effect Transistor
Datasheet download datasheet P3506ETF Datasheet
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Full PDF Text Transcription

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NIKO-SEM P-Channel Enhancement Mode P3506ETF Field Effect Transistor TO-220F Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) -60V 35mΩ ID -20A D G S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current2 Pulsed Drain Current1 Avalanche Current Avalanche Energy Power Dissipation Junction & Storage Temperature Range TC = 25 °C TC = 100 °C L = 0.1mH TC = 25 °C TC = 100 °C VDS VGS ID IDM IAS EAS PD TJ, Tstg 1. GATE 2. DRAIN 3.
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