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P5515BD - N-Channel Enhancement Mode Field Effect Transistor

Download the P5515BD datasheet PDF. This datasheet also covers the P5515BD-NIKO variant, as both devices belong to the same n-channel enhancement mode field effect transistor family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (P5515BD-NIKO-SEM.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number P5515BD
Manufacturer NIKO-SEM
File Size 159.00 KB
Description N-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet P5515BD Datasheet

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Other Datasheets by NIKO-SEM

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NIKO-SEM N-Channel Enhancement Mode Field Effect Transistor P5515BD TO-252 Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) 150V 55mΩ ID 24.6A D G S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current1 Avalanche Current Avalanche Energy Power Dissipation Junction & Storage Temperature Range TC = 25 °C TC = 100 °C L = 1mH TC = 25 °C TC = 100 °C VDS VGS ID IDM IAS EAS PD TJ, Tstg 1. GATE 2. DRAIN 3. SOURCE LIMITS 150 ±20 24.6 15.5 60 11.6 67.