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P8806BM - N-Channel Enhancement Mode Field Effect Transistor

This page provides the datasheet information for the P8806BM, a member of the P8806BM-NIKO N-Channel Enhancement Mode Field Effect Transistor family.

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Part number P8806BM
Manufacturer NIKO-SEM
File Size 254.76 KB
Description N-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet P8806BM Datasheet
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    NIKO-SEM N-Channel Enhancement Mode Field Effect Transistor P8806BM SOT-23 Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 60V 88mΩ 2A D G S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 70 °C Power Dissipation TA = 25 °C TA = 70 °C Operating Junction & Storage Temperature Range VDS VGS ID IDM PD Tj, Tstg G. GATE D. DRAIN S. SOURCE LIMITS 60 ±20 2 1.6 11 0.78 0.5 -55 to 150 UNITS V V A W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Ambient2 RJA 159 °C / W 1Pulse width limited by maximum junction temperature.
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