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PA910BM - N-Channel Field Effect Transistor

This page provides the datasheet information for the PA910BM, a member of the PA910BM-NIKO N-Channel Field Effect Transistor family.

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Datasheet Details

Part number PA910BM
Manufacturer NIKO-SEM
File Size 212.69 KB
Description N-Channel Field Effect Transistor
Datasheet download datasheet PA910BM Datasheet
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    NIKO-SEM N-Channel Enhancement Mode PA910BM Field Effect Transistor SOT-23 Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) 100V 190mΩ ID 1.6A D G S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate-Source Voltage Continuous Drain Current Pulsed Drain Current1 VGS TA = 25 °C TA = 70 °C ID IDM Power Dissipation3 TA = 25 °C TA = 70°C Operating Junction & Storage Temperature Range PD Tj, Tstg G: GATE D: DRAIN S: SOURCE LIMITS ±20 1.6 1.3 7 1.25 0.8 -55 to 150 UNITS V A W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Ambient2 Junction-to-Ambient2 t ≦10s Steady-State RJA RJA 100 °C/W 147 1Pulse width limited by maximum junction temperature.
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