PB521BX - P-Channel Enhancement Mode Field Effect Transistor

NIKO-SEM

Download the PB521BX datasheet PDF. This datasheet also covers the PB521BX-NIKO variant, as both devices belong to the same p-channel enhancement mode field effect transistor family and are provided as variant models within a single manufacturer datasheet.

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PB521BX p-channel enhancement mode field effect transistor by NIKO-SEM - Datasheet Preview — Note: The manufacturer provides a single datasheet file (PB521BX-NIKO-SEM.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	PB521BX
Manufacturer	NIKO-SEM
File Size	213.47 KB
Description	P-Channel Enhancement Mode Field Effect Transistor
Datasheet	PB521BX Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NIKO-SEM P-Channel Enhancement Mode PB521BX Field Effect Transistor PDFN 2x2S Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID -20V 21mΩ -8A D G S G : GATE D : DRAIN S : SOURCE ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C Power Dissipation TA = 25 °C TA = 70 °C Operating Junction & Storage Temperature Range VDS VGS ID IDM PD Tj, Tstg LIMITS -20 ±10 -8 -6.4 29 2.1 1.4 -55 to 150 UNITS V V A W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM Junction-to-Ambient2 RJA 57 1Pulse width limited by maximum junction temperature.