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PB5G8JW - Dual N-Channel Enhancement Mode Field Effect Transistor

Download the PB5G8JW datasheet PDF. This datasheet also covers the PB5G8JW-NIKO variant, as both devices belong to the same dual n-channel enhancement mode field effect transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Pb.
  • Free, Halogen Free and RoHS compliant.
  • Low RDS(on) to Minimize Conduction Losses.
  • Ohmic Region Good RDS(on) Ratio.
  • Optimized Gate Charge to Minimize Switching Losses.
  • Products Integrated ESD diode with ESD Protected up to 2KV.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (PB5G8JW-NIKO-SEM.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number PB5G8JW
Manufacturer NIKO-SEM
File Size 230.15 KB
Description Dual N-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet PB5G8JW Datasheet

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Other Datasheets by NIKO-SEM

Part Number Description
PB521BX P-Channel Enhancement Mode Field Effect Transistor
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
NIKO-SEM Dual N-Channel Enhancement Mode Field Effect Transistor PB5G8JW PDFN 2x2S Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 20V 35mΩ 5A Features • Pb−Free, Halogen Free and RoHS compliant. • Low RDS(on) to Minimize Conduction Losses. • Ohmic Region Good RDS(on) Ratio. • Optimized Gate Charge to Minimize Switching Losses. • Products Integrated ESD diode with ESD Protected up to 2KV. Applications • Protection Circuits Applications. • Logic/Load Switch Circuits Applications. 100% RG Test , 100% UIL Test 1 : S1. 2 : G1. 3 : D2. 4 : S2. 5 : G2. 6 : D1.