PB5G8JW Description
NIKO-SEM Dual N-Channel Enhancement Mode Field Effect Transistor PB5G8JW PDFN 2x2S Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 20V 35mΩ.
PB5G8JW Key Features
- Pb-Free, Halogen Free and RoHS pliant
- Low RDS(on) to Minimize Conduction Losses
- Ohmic Region Good RDS(on) Ratio
- Optimized Gate Charge to Minimize Switching Losses
- Products Integrated ESD diode with ESD Protected up to 2KV
PB5G8JW Applications
- Protection Circuits Applications