Datasheet4U Logo Datasheet4U.com

PC561BA - P-Channel Enhancement Mode Field Effect Transistor

This page provides the datasheet information for the PC561BA, a member of the PC561BA-NIKO P-Channel Enhancement Mode Field Effect Transistor family.

Features

  • Pb.
  • Free, Halogen Free and RoHS compliant.
  • Low RDS(on) to Minimize Conduction Losses.
  • Ohmic Region Good RDS(on) Ratio.
  • Optimized Gate Charge to Minimize Switching Losses.

📥 Download Datasheet

Datasheet preview – PC561BA

Datasheet Details

Part number PC561BA
Manufacturer NIKO-SEM
File Size 427.13 KB
Description P-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet PC561BA Datasheet
Additional preview pages of the PC561BA datasheet.

📁 Similar Datasheet

  • PC561BA - P-Channel MOSFET (UNIKC)
  • PC563 - Ultra Slim 5 Amp Relay (Picker Components)
  • PC565 - 25 Amp Ultraminiature Automotive PCB Relay (Picker Components)
  • PC566 - Ultraminiature Automotive PCB Twin Power Relay (Picker Components)
  • PC567 - Ultraminiature Automotive PCB Twin Power Relay (Picker Components)
  • PC56F84550VLF - digital signal controllers (NXP)
  • PC5-12-12 - Single/ Dual output DC-DC converter 1.5W ~ 25W (DENSEI-LAMBDA)
  • PC5-12-3.3 - Single/ Dual output DC-DC converter 1.5W ~ 25W (DENSEI-LAMBDA)
  • PC5-12-5 - Single/ Dual output DC-DC converter 1.5W ~ 25W (DENSEI-LAMBDA)
  • PC5-24-12 - Single/ Dual output DC-DC converter 1.5W ~ 25W (DENSEI-LAMBDA)
Other Datasheets by NIKO-SEM

    Full PDF Text Transcription

    Click to expand full text
    NIKO-SEM P-Channel Enhancement Mode PC561BA Field Effect Transistor SOT-89 Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) -30V 45mΩ ID -5.7A Features • Pb−Free, Halogen Free and RoHS compliant. • Low RDS(on) to Minimize Conduction Losses. • Ohmic Region Good RDS(on) Ratio. • Optimized Gate Charge to Minimize Switching Losses. Applications • Protection Circuits Applications. • Logic/Load Switch Circuits Applications. 1 23 D G S 1. GATE 2. DRAIN 3. SOURCE ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate-Source Voltage Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C Avalanche Current Avalanche Energy L = 0.
    Published: |