PD5C1BA - P-Channel Enhancement Mode Field Effect Transistor

This page provides the datasheet information for the PD5C1BA, a member of the PD5C1BA-NIKO P-Channel Enhancement Mode Field Effect Transistor family.

Features

Pb.
Free, Halogen Free and RoHS compliant.
Low RDS(on) to Minimize Conduction Losses.
Ohmic Region Good RDS(on) Ratio.
Optimized Gate Charge to Minimize Switching Losses.

NIKO-SEM

📥 Download Datasheet

Datasheet Details

Part number	PD5C1BA
Manufacturer	NIKO-SEM
File Size	341.71 KB
Description	P-Channel Enhancement Mode Field Effect Transistor
Datasheet	PD5C1BA Datasheet
Additional preview pages of the PD5C1BA datasheet.

📁 Similar Datasheet

PD5036 - Telephone Ring Generator Controller (PowerDsine)
PD504BA - N-Channel MOSFET (UNIKC)
PD506BA - N-Channel MOSFET (UNIKC)
PD50F2 - FRD (Nihon Inter Electronics)
PD50F4 - FRD (Nihon Inter Electronics)
PD50F5 - FRD MODULE (ETC)
PD50F6 - FRD MODULE (ETC)
PD50F6 - FRD MODULE (ETC)
PD510BA - N-Channel MOSFET (UNIKC)
PD515BA - P-Channel MOSFET (UNIKC)

Other Datasheets by NIKO-SEM

PD5G3EA - P-Channel Enhancement Mode Field Effect Transistor

Full PDF Text Transcription

Click to expand full text

NIKO-SEM P-Channel Enhancement Mode PD5C1BA Field Effect Transistor TO-252 Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) -40V 5.6mΩ ID -88A Features • Pb−Free, Halogen Free and RoHS compliant. • Low RDS(on) to Minimize Conduction Losses. • Ohmic Region Good RDS(on) Ratio. • Optimized Gate Charge to Minimize Switching Losses. Applications • Protection Circuits Applications. • Logic/Load Switch Circuits Applications. D G S 1. GATE 2. DRAIN 3. SOURCE ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current1 Avalanche Current Avalanche Energy Power Dissipation Junction & Storage Temperature Range TC = 25 °C TC = 100 °C L = 0.

Published: Nov 19, 2024 |