• Part: PD6A6BA
  • Description: N-Channel Enhancement Mode Field Effect Transistor
  • Category: Transistor
  • Manufacturer: NIKO-SEM
  • Size: 171.08 KB
Download PD6A6BA Datasheet PDF
NIKO-SEM
PD6A6BA
PD6A6BA is N-Channel Enhancement Mode Field Effect Transistor manufactured by NIKO-SEM.
- Part of the PD6A6BA-NIKO comparator family.
NIKO-SEM N-Channel Enhancement Mode Field Effect Transistor TO-252 Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) 40V 8mΩ ID 60A ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current2 Pulsed Drain Current1 Avalanche Current Avalanche Energy Power Dissipation Junction & Storage Temperature Range TC = 25 °C TC = 100 °C L = 0.1m H TC = 25 °C TC = 100 °C VDS VGS IDM IAS EAS PD TJ, Tstg THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL Junction-to-Case RJC Junction-to-Ambient RJA 1Pulse width limited by maximum junction temperature. 2Package limitation current is 39A TYPICAL 1. GATE 2. DRAIN 3. SOURCE LIMITS 40 ±20 60 38 110 30.5 46.7 62 25 -55 to 150 UNITS V V A m J W °C MAXIMUM 2 UNITS °C /...