PG1010BD - N-Channel Enhancement Mode Field Effect Transistor

NIKO-SEM

Download the PG1010BD datasheet PDF. This datasheet also covers the PG1010BD-NIKO variant, as both devices belong to the same n-channel enhancement mode field effect transistor family and are provided as variant models within a single manufacturer datasheet.

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PG1010BD n-channel enhancement mode field effect transistor by NIKO-SEM - Datasheet Preview — Note: The manufacturer provides a single datasheet file (PG1010BD-NIKO-SEM.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	PG1010BD
Manufacturer	NIKO-SEM
File Size	253.54 KB
Description	N-Channel Enhancement Mode Field Effect Transistor
Datasheet	PG1010BD Datasheet

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Other Datasheets by NIKO-SEM

Part Number	Description
PG1010BIS	N-Channel Enhancement Mode Field Effect Transistor
PG1010BK	N-Channel Field Effect Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NIKO-SEM N-Channel Enhancement Mode Field Effect Transistor PG1010BD TO-252 Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) 100V 10.5mΩ ID 59A D G S ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current2 Pulsed Drain Current1 TC = 25 ° C TC = 100 ° C Avalanche Current Avalanche Energy L = 1mH Power Dissipation TC = 25 ° C TC = 100 ° C Operating Junction & Storage Temperature Range VDS VGS ID IDM IAS EAS PD Tj, Tstg THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL Junction-to-Case RJC Junction-to-Ambient RJA 1Pulse width limited by maximum junction temperature. 2Package limitation current is 55A TYPICAL 12 3 1. GATE 2. DRAIN 3.