PP2H06BK - N-Channel Enhancement Mode Field Effect Transistor

This page provides the datasheet information for the PP2H06BK, a member of the PP2H06BK-NIKO N-Channel Enhancement Mode Field Effect Transistor family.

NIKO-SEM

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Datasheet Details

Part number	PP2H06BK
Manufacturer	NIKO-SEM
File Size	373.38 KB
Description	N-Channel Enhancement Mode Field Effect Transistor
Datasheet	PP2H06BK Datasheet
Additional preview pages of the PP2H06BK datasheet.

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NIKO-SEM N-Channel Enhancement Mode PP2H06BK Field Effect Transistor PDFN 5x6P Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) 60V 2.8mΩ ID 131A D G S D DDD #1 S S S G G. GATE D. DRAIN S. SOURCE ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C Continuous Drain Current TA = 25 °C TA = 70 °C Avalanche Current Avalanche Energy L = 0.1mH Power Dissipation TC = 25 °C TC = 100 °C Power Dissipation3 TA = 25 °C TA = 70 °C Operating Junction & Storage Temperature Range VDS VGS ID IDM ID IAS EAS PD PD Tj, Tstg LIMITS 60 ±20 131 93 166 23 19 54 145 107 53 3.3 2.

Published: Dec 2, 2024 |