PP4B10BS - N-Channel Enhancement Mode Field Effect Transistor

This page provides the datasheet information for the PP4B10BS, a member of the PP4B10BS-NIKO N-Channel Enhancement Mode Field Effect Transistor family.

NIKO-SEM

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Datasheet Details

Part number	PP4B10BS
Manufacturer	NIKO-SEM
File Size	190.34 KB
Description	N-Channel Enhancement Mode Field Effect Transistor
Datasheet	PP4B10BS Datasheet
Additional preview pages of the PP4B10BS datasheet.

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NIKO-SEM N-Channel Logic Level Enhancement Mode Field Effect Transistor PP4B10BS TO-263 Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) 100V 4.2mΩ ID 134A D G S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate-Source Voltage Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C Avalanche Current Avalanche Energy L = 1mH Power Dissipation TC = 25 °C TC = 100 °C Operating Junction & Storage Temperature Range VGS ID IDM IAS EAS PD Tj, Tstg 123 1.GATE 2.DRAIN 3.SOURCE LIMITS ±20 134 94 370 20 200 166 83 -55 to 175 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL Junction-to-Case RJC Junction-to-Ambient RJA 1Pulse width limited by maximum junction temperature.

Published: Dec 2, 2024 |