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PR802BA33 - N-Channel Enhancement Mode Field Effect Transistor

This page provides the datasheet information for the PR802BA33, a member of the PR802BA33-NIKO N-Channel Enhancement Mode Field Effect Transistor family.

Features

  • Halogen Free and RoHS compliant.
  • Low RDS(on) to Minimize Conduction Losses.
  • Ohmic Region Good RDS(on) Ratio.
  • Optimized Gate Charge to Minimize Switching Losses.
  • 100% UIS Tested & 100% Rg Tested.
  • Patent No. US9,947,551. D G S PR802BA33 PowerFET.

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Datasheet Details

Part number PR802BA33
Manufacturer NIKO-SEM
File Size 330.08 KB
Description N-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet PR802BA33 Datasheet
Additional preview pages of the PR802BA33 datasheet.

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    Full PDF Text Transcription

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    NIKO-SEM N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 4mΩ ID 74A Features • Halogen Free and RoHS compliant. • Low RDS(on) to Minimize Conduction Losses. • Ohmic Region Good RDS(on) Ratio. • Optimized Gate Charge to Minimize Switching Losses. • 100% UIS Tested & 100% Rg Tested. • Patent No. US9,947,551. D G S PR802BA33 PowerFET Applications • Protection Circuits Applications. • Computer for DC to DC Converters Applications. G. GATE D. DRAIN S. SOURCE ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Drain-Source Voltage Gate-Source Voltage TC = 25 °C Continuous Drain Current4 TC = 100 °C TA = 25 °C Pulsed Drain Current1 TA = 70 °C Avalanche Current Avalanche Energy L = 0.
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