PR802BA33 Key Features
- Halogen Free and RoHS pliant
- Low RDS(on) to Minimize Conduction Losses
- Ohmic Region Good RDS(on) Ratio
- Optimized Gate Charge to Minimize Switching Losses
- 100% UIS Tested & 100% Rg Tested
- Patent No. US9,947,551
- Part: PR802BA33
- Description: N-Channel Enhancement Mode Field Effect Transistor
- Manufacturer: NIKO-SEM
- Size: 330.08 KB
