PR802BA33 Overview
Key Features
- Halogen Free and RoHS compliant
- Low RDS(on) to Minimize Conduction Losses
- Ohmic Region Good RDS(on) Ratio
- Optimized Gate Charge to Minimize Switching Losses
- 100% UIS Tested & 100% Rg Tested
| Part | PR802BA33 |
|---|---|
| Description | N-Channel Enhancement Mode Field Effect Transistor |
| Category | Transistor |
| Manufacturer | NIKO-SEM |
| Size | 330.08 KB |
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