PR802BA33 - N-Channel Enhancement Mode Field Effect Transistor

NIKO-SEM

Download the PR802BA33 datasheet PDF. This datasheet also covers the PR802BA33-NIKO variant, as both devices belong to the same n-channel enhancement mode field effect transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

Halogen Free and RoHS compliant.
Low RDS(on) to Minimize Conduction Losses.
Ohmic Region Good RDS(on) Ratio.
Optimized Gate Charge to Minimize Switching Losses.
100% UIS Tested & 100% Rg Tested.
Patent No. US9,947,551. D G S PR802BA33 PowerFET.

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PR802BA33 n-channel enhancement mode field effect transistor by NIKO-SEM - Datasheet Preview — Note: The manufacturer provides a single datasheet file (PR802BA33-NIKO-SEM.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	PR802BA33
Manufacturer	NIKO-SEM
File Size	330.08 KB
Description	N-Channel Enhancement Mode Field Effect Transistor
Datasheet	PR802BA33 Datasheet

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Full PDF Text Transcription (Reference)

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NIKO-SEM N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 4mΩ ID 74A Features • Halogen Free and RoHS compliant. • Low RDS(on) to Minimize Conduction Losses. • Ohmic Region Good RDS(on) Ratio. • Optimized Gate Charge to Minimize Switching Losses. • 100% UIS Tested & 100% Rg Tested. • Patent No. US9,947,551. D G S PR802BA33 PowerFET Applications • Protection Circuits Applications. • Computer for DC to DC Converters Applications. G. GATE D. DRAIN S. SOURCE ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Drain-Source Voltage Gate-Source Voltage TC = 25 °C Continuous Drain Current4 TC = 100 °C TA = 25 °C Pulsed Drain Current1 TA = 70 °C Avalanche Current Avalanche Energy L = 0.