PV510BA - N-Channel Enhancement Mode Field Effect Transistor

NIKO-SEM

Download the PV510BA datasheet PDF. This datasheet also covers the PV510BA-NIKO variant, as both devices belong to the same n-channel enhancement mode field effect transistor family and are provided as variant models within a single manufacturer datasheet.

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PV510BA n-channel enhancement mode field effect transistor by NIKO-SEM - Datasheet Preview — Note: The manufacturer provides a single datasheet file (PV510BA-NIKO-SEM.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	PV510BA
Manufacturer	NIKO-SEM
File Size	352.43 KB
Description	N-Channel Enhancement Mode Field Effect Transistor
Datasheet	PV510BA Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NIKO-SEM N-Channel Enhancement Mode Field Effect Transistor PV510BA SOP-8 Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 4mΩ ID 22A D G S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current1 Avalanche Current Avalanche Energy Power Dissipation Junction & Storage Temperature Range TA = 25 °C TA = 70 °C L = 0.1mH TA = 25 °C TA = 70 °C VDS VGS ID IDM IAS EAS PD TJ, Tstg G: GATE D: DRAIN S: SOURCE LIMITS 30 ±20 22 17 100 37 68 2.7 1.