PV510BA Overview
2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. Pulse Width 300 sec, Duty Cycle 2%.
N-channel Enhancement Mode Field Effect Transistor
This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | PV510BA |
|---|---|
| Manufacturer | NIKO-SEM |
| File Size | 352.43 KB |
| Description | N-Channel Enhancement Mode Field Effect Transistor |
| Datasheet | PV510BA PV510BA-NIKO Datasheet (PDF) |
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2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. Pulse Width 300 sec, Duty Cycle 2%.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
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PV510BA | MOSFET | UNIKC |
| Part Number | Description |
|---|---|
| PV507BA | P-Channel Logic Level Enhancement Mode Field Effect Transistor |
| PV563BA | P-Channel Enhancement Mode Field Effect Transistor |
| PV5G3EA | P-Channel Field Effect Transistor |