PV510BA - N-Channel Enhancement Mode Field Effect Transistor

This page provides the datasheet information for the PV510BA, a member of the PV510BA-NIKO N-Channel Enhancement Mode Field Effect Transistor family.

NIKO-SEM

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Datasheet Details

Part number	PV510BA
Manufacturer	NIKO-SEM
File Size	352.43 KB
Description	N-Channel Enhancement Mode Field Effect Transistor
Datasheet	PV510BA Datasheet
Additional preview pages of the PV510BA datasheet.

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Full PDF Text Transcription

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NIKO-SEM N-Channel Enhancement Mode Field Effect Transistor PV510BA SOP-8 Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 4mΩ ID 22A D G S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current1 Avalanche Current Avalanche Energy Power Dissipation Junction & Storage Temperature Range TA = 25 °C TA = 70 °C L = 0.1mH TA = 25 °C TA = 70 °C VDS VGS ID IDM IAS EAS PD TJ, Tstg G: GATE D: DRAIN S: SOURCE LIMITS 30 ±20 22 17 100 37 68 2.7 1.

Published: Dec 2, 2024 |