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PV563BA - P-Channel Enhancement Mode Field Effect Transistor

Download the PV563BA datasheet PDF. This datasheet also covers the PV563BA-NIKO variant, as both devices belong to the same p-channel enhancement mode field effect transistor family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (PV563BA-NIKO-SEM.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number PV563BA
Manufacturer NIKO-SEM
File Size 230.30 KB
Description P-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet PV563BA Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NIKO-SEM P-Channel Logic Level Enhancement Mode PV563BA Field Effect Transistor SOP-8 Halogen-free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) -40V 15mΩ ID -9.5A D G S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current1 Avalanche Current Avalanche Energy Power Dissipation3 Junction & Storage Temperature Range TA = 25 °C TA = 70 °C L = 0.1mH TA = 25 °C TA = 70 °C VDS VGS ID IDM IAS EAS PD Tj, Tstg G : GATE D : DRAIN S : SOURCE LIMITS -40 ±25 -9.5 -7.