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PV563BA - P-Channel Enhancement Mode Field Effect Transistor

This page provides the datasheet information for the PV563BA, a member of the PV563BA-NIKO P-Channel Enhancement Mode Field Effect Transistor family.

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Datasheet Details

Part number PV563BA
Manufacturer NIKO-SEM
File Size 230.30 KB
Description P-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet PV563BA Datasheet
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Full PDF Text Transcription

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NIKO-SEM P-Channel Logic Level Enhancement Mode PV563BA Field Effect Transistor SOP-8 Halogen-free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) -40V 15mΩ ID -9.5A D G S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current1 Avalanche Current Avalanche Energy Power Dissipation3 Junction & Storage Temperature Range TA = 25 °C TA = 70 °C L = 0.1mH TA = 25 °C TA = 70 °C VDS VGS ID IDM IAS EAS PD Tj, Tstg G : GATE D : DRAIN S : SOURCE LIMITS -40 ±25 -9.5 -7.
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