TD422BL - N-Channel Enhancement Mode Field Effect Transistor

NIKO-SEM

Download the TD422BL datasheet PDF. This datasheet also covers the TD422BL-NIKO variant, as both devices belong to the same n-channel enhancement mode field effect transistor family and are provided as variant models within a single manufacturer datasheet.

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TD422BL n-channel enhancement mode field effect transistor by NIKO-SEM - Datasheet Preview — Note: The manufacturer provides a single datasheet file (TD422BL-NIKO-SEM.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	TD422BL
Manufacturer	NIKO-SEM
File Size	276.57 KB
Description	N-Channel Enhancement Mode Field Effect Transistor
Datasheet	TD422BL Datasheet

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Full PDF Text Transcription (Reference)

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NIKO-SEM N-Channel Enhancement Mode TD422BL Field Effect Transistor TO-252 Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 6mΩ ID 69A D G S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate-Source Voltage Continuous Drain Current2 Pulsed Drain Current1 TC = 25 °C TC = 100 °C Avalanche Current Avalanche Energy L = 0.1mH Power Dissipation TC = 25 °C TC = 100 °C Operating Junction & Storage Temperature Range VGS ID IDM IAS EAS PD Tj, Tstg 1. GATE 2. DRAIN 3. SOURCE LIMITS ±20 69 45 180 41 84 50 20 -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL Junction-to-Case RJC 1Pulse width limited by maximum junction temperature.