NJS BDW94
Silicon PNP Power Transistor
DESCRIPTION
● Collector Current -lc= -12A● Collector-Emitter Sustaining Voltage- : VCEO(sus) = -45V(Min)- BDW94; -60V(Min)- BDW94A -SOV(Min)- BDW94B; -100V(Min)- BDW94C
● Complement to Type BDW93/A/B/C
APPLICATIONS
● Designed for hammer drivers, audio amplifier applications.ABSOLUTE MAXIMUM RATINGS
(Ta=25-C) SYMBOL PARAMETER VALUE UNIT BDW94 -45 VCBO Collector-Base Voltage BDW94A -60 V BDW94B -80 BDW94C -100 BDW94 -45 VCEO Collector-Emitter Voltage BDW94A -60 V BDW94B -80 BDW94C -100 VEBO Emitter-Base Voltage -5 V Ic Collector Current-Continuous ICM Collector Current-Peak -12 A -15 A la Base Current Collector Power Dissipation PC @ TC=25'C Tj Junction Temperature -0.2 A 80 W 150●c Tstg Storage Temperature Range -65-150 'C THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX 1.5 UNIT
●c/w Quality Semi-Conductors r i'ii 12 3 -vw — l-wv — I — * R' 12 -3 "H 1.BASE 2. COLLECTOR 3. EMITTER TO-220C package r , rJTL, jlUl^t A / MOOV *1 */* soi'. . \^j"*~L...