NJS KSD5059
Silicon NPN Power Transistor
DESCRIPTION
● High Breakdown Voltage- : VCBO= 1500V (Min)● High Switching Speed
● High Reliability
APPLICATIONS
● Designed for color monitor horizontal output applicaitionsABSOLUTE MAXIMUM RATINGS
(Ta=25'C) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V 1 III | |I III PIN 1. BASE 2. COLLECTOR 3- EMITTER 1 23 TO-3PML package r - ; : \SC- A rtl● '
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●●' *> 4 * p ' '* '' A^ v' j»..7-r.l{rr:;.1.-.'r:i ; H" " Z lr G -*● -»-L VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 6 V Ic Collector Current- Continuous 6 A ICP Collector Current-Peak Collector Power Dissipation PC @ TC=25'C TJ Junction Temperature 20 A 60 W 150 °C Tstg Storage Temperature Range -55-150 °C -R- mm DIM MIN MAX A 19,90 20.10 B 15,90 16.10 C 5,50 5.70 D 0.90 1.10 F 3.30 3.50 G 2.90 3.10 R 5.90 6.10 J 0.535 0.605 K 22.30 '22.50 L 1.30 2.10 N 10.80 11,00 0 4,90 5.10 R 3.75 3.95 S 3.20 3,40 U 9.30 10.10 Y 4.70 4.90 Z 1.90 2.10 NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice.