KSD5070 - Silicon NPN Power Transistor

NJS

General Description

High Breakdown Voltage- : VCBO= 1500V (Min) High Switching Speed High Reliability

PIN 1.BASE 2.

Designed for color TV horizontal output applicaitions ABSOLUTE MAXI

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KSD5070 silicon npn power transistor by NJS - Datasheet Preview

Datasheet Details

Part number	KSD5070
Manufacturer	NJS
File Size	63.69 KB
Description	Silicon NPN Power Transistor
Datasheet	KSD5070 Datasheet

Full PDF Text Transcription for KSD5070 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for KSD5070. For precise diagrams, and layout, please refer to the original PDF.

Jziizu <^)£.mi-(-on.auctoi Lrioauchi, Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon NPN Power Transistor TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (9...

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n NPN Power Transistor TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 KSD5070 DESCRIPTION • High Breakdown Voltage- : VCBO= 1500V (Min) • High Switching Speed • High Reliability • Built-in Damper Diode f 1_, 1~mp ^ PIN 1.BASE 2. COLLECTOR 3.BJTTER TO-3PML package APPLICATIONS • Designed for color TV horizontal output applicaitions ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V' VEBO Emitter-Base Voltage 6 V Ic Collector Current- Continuous 2.

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