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KSD5070 Datasheet PDF

NJS KSD5070

Silicon NPN Power Transistor

Part No. KSD5070
Datasheet KSD5070 Download
Manufacturer
NJS
Description Silicon NPN Power Transistor
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KSD5070 datasheet page 1 preview

DESCRIPTION

● High Breakdown Voltage- : VCBO= 1500V (Min)
● High Switching Speed
● High Reliability
● Built-in Damper Diode f 1_, 1~mp ^ PIN 1.BASE 2. COLLECTOR 3.BJTTER TO-3PML package

APPLICATIONS

● Designed for color TV horizontal output applicaitions

ABSOLUTE MAXIMUM RATINGS

(Ta=25'C) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V' VEBO Emitter-Base Voltage 6 V Ic Collector Current- Continuous 2.5 A ICP Collector Current-Peak Collector Power Dissipation PC @ TC=25'C Tj Junction Temperature Tstg Storage Temperature Range 10 A 50 W 150
●c -55-150 °c { :
● : . .
● > -*● C ^Q__ A
●-> u1
●:● ^ F" *
● . .-
●- ,
● Y
●*-.. . t. l"' Z ^ 1 , '●' *~ J » R ->- »-K^^ mm DIM WIN MAX A 19,90 20.10 B 15.90 16.10 C 5.50 5.70 D 0.90 1.10 F 3.30 3,50 G 2.90 3.10 H 5,30 6.10 J 0,595 0.605 K 22.30 22,50 L 1.90 2,10 N 10.80 11.00 u 4.30 5.10 R 3.75 3.95 S 3.20 3,40 U 9,90 10.10 Y 4,70 4.90 Z 1.90 2.10 NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensionswithout notice.
KSD5070 page 2 preview