NJS KSD5074
Silicon NPN Power Transistor
DESCRIPTION
● High Breakdown Voltage- : VCBO= 1500V (Min)● High Switching Speed
● High Reliability
APPLICATIONS
● Designed for color TV horizontal output applicaitionsABSOLUTE MAXIMUM RATINGS
(Ta=25'C) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VOEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 6 V lo Collector Current- Continuous 2.5 A ICP Collector Current-Peak Collector Power Dissipation PC @ TC=25'C Tj Junction Temperature 10 A 50 W 150●c Tstg Storage Temperature Range -55-150
●c TELEPHONE: (973) 376-2922 (212) 227-6005 FAX: (973) 376-8960 KSD5074 f i 2 :● pIN 1.BASE 2. COLLECTOR 3.B/IITTER TO-3PML package I: :=-- 1at<v . ,-
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●*●' -*-L «●''*● mm DIM MIN MAX A 19.90 20.10 B 15.90 16,10 C 5.50 5.70 D 0.30 1.10 F 3.30 3,50 G 2.90 3,10 K 5.90 6.10 J 0,595 0,605 K 22.30 22.50 L 1.90 2.10 N 10.80 11,00 0 4.30 5.10 R 3.75 3,95 S 3.20 3,40 u 9,90 10,10 V 4,70 4.90 z 1.90 2.10 NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice.