NJS KSD5078
Silicon NPN Power Transistor
DESCRIPTION
● High Breakdown Voltage- : VCBO= 1500V (Min)● High Switching Speed
● High Reliability
APPLICATIONS
● Designed for color TV horizontal output applicaitionsABSOLUTE MAXIMUM RATINGS
(Ta=25'C) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V. VEBO Emitter-Base Voltage 6 V Ic Collector Current- Continuous 8 A ICP Collector Current-Peak Collector Power Dissipation PC @ TC=25'C Tj Junction Temperature Tstg Storage Temperature Range 30 A 70 W 150 °c -55~150 °c f ., -nj PIN 1.BASE 2. COLLECTOR 3.ButlTTER TO-3PML package J'-i £●, *;' A" B . '"tu Jt 1*'
● —●> Y *- , '. > ' ' 2 A G i - R -H- ^. mm DIM MIN A 19.90 B 15.90 C 5,50 D 0.90 F 3.30 G 2,90 H 5.90 J 0.595 K 22.30 L 1,90 N 10.80 Q i 4.90 R 3.75 S 3.20 U 9.90 Y 4,70 Z 1.90 MAX 20.10 16,10 5,70 1.10 3,50 3.10 6.10 0,605 22.50 2.10 11,00 5,10 3.95 3.40 10.10 4,90 2.10 NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice.