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KSD5080 - Silicon NPN Power Transistor

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Description

High Breakdown Voltage- :VCBo=1500V(Min) High Switching Speed High Reliability Built-in Damper Diode APPLICATIONS Designed for color TV horizontal output applicaitions ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL PARAMETER VALUE UNIT VCBO Collecto

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Datasheet Details

Part number KSD5080
Manufacturer NJS
File Size 63.23 KB
Description Silicon NPN Power Transistor
Datasheet download datasheet KSD5080 Datasheet
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J. C/ 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. , Una. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon NPN Power Transistor DESCRIPTION • High Breakdown Voltage- :VCBo=1500V(Min) • High Switching Speed • High Reliability • Built-in Damper Diode APPLICATIONS • Designed for color TV horizontal output applicaitions ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V Veso Emitter-Base Voltage 6 V Ic Collector Current- Continuous 8 A ICP Collector Current-Peak Collector Power Dissipation PC @ TC=25'C Tj Junction Temperature 30 A 70 W 150 °c Tstg Storage Temperature Range -55-150 'C n 1 ,, , KSD5080 '^ ~ M PIN 1.DASE 2. COLLECTOR 3.
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