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KSD5080 Datasheet Silicon NPN Power Transistor

Manufacturer: NJS

Overview: J. C/ 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. , Una.

General Description

• High Breakdown Voltage- :VCBo=1500V(Min) • High Switching Speed • High Reliability • Built-in Damper Diode APPLICATIONS • Designed for color TV horizontal output applicaitions ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V Veso Emitter-Base Voltage 6 V Ic Collector Current- Continuous 8 A ICP Collector Current-Peak Collector Power Dissipation PC @ TC=25'C Tj Junction Temperature 30 A 70 W 150 °c Tstg Storage Temperature Range -55-150 'C n 1 ,, , KSD5080 '^ ~ M PIN 1.DASE 2.

COLLECTOR 3.

EMITTER TO-3PML package i : • • -* c -*- i~* 6 " '*S* F-.

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