KSD5080 Datasheet PDF

DESCRIPTION

● High Breakdown Voltage- :VCBo=1500V(Min)
● High Switching Speed
● High Reliability
● Built-in Damper Diode

APPLICATIONS

● Designed for color TV horizontal output applicaitions

ABSOLUTE MAXIMUM RATINGS

(Ta=25'C) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V Veso Emitter-Base Voltage 6 V Ic Collector Current- Continuous 8 A ICP Collector Current-Peak Collector Power Dissipation PC @ TC=25'C Tj Junction Temperature 30 A 70 W 150 °c Tstg Storage Temperature Range -55-150 'C n 1 ,, , KSD5080 '^ ~ M PIN 1.DASE 2. COLLECTOR 3. EMITTER TO-3PML package i :
●
● -* c -*- i~* 6 " '*S* F-. 4 Qk' .. i > - : i T '● ~ ' ~~—T7 C_' i» -.; ; <' A f● : 1 H
●
●'" Kt 1f ".'.—..'●.●.""
●
●:●: Z "' G" * "*~L f"' ** T ~-ir~J ~*~° mm DIM MIN MAX A 19.90 20.10 B 15.90 16,10 C 5.50 5.70 D 0,90 1.10 F 3.30 3.50 G 2.90 3.10 H 5.90 6,10 J 0.595 0.605 K 22,30 22.50 L 1.90 2.10 N 10,80 11.00 0 490 5.10 R 175 3.95 S 3.20 3,40 u 9.90 10,10 Y 4.70 4,90 Z 1,90 2,10 NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice.