NJS KSD5090
Silicon NPN Power Transistor
DESCRIPTION
● High Breakdown Voltage- : VCBO= 1500V (Min)● High Switching Speed
● High Reliability
● Built-in Damper Diode
APPLICATIONS
● Designed for color TV horizontal output applicaitionsABSOLUTE MAXIMUM RATINGS
(Ta=25'C) SYMBOL PARAMETER VALUE UNIT VOBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 6 V Ic Collector Current- Continuous 8 A ICP Collector Current-Peak Collector Power Dissipation PC @ TC=25°C Tj Junction Temperature Tstg Storage Temperature Range 30 A 150 W 150●c -55-150
●c KSD5090 I1 2 1 ^ri 1 1 1 Wr~i 1 12 3 3 PIN 1.BASE 1- COLLECTOR 3. EMITTER TO-3PN package C
●*- fijQif / ^*^\ I iL-J K G -*";^-L ,.,^r --R mm DIM MIN MAX A 19.90 20.10 B 15.50 15.70 C 4.70 4.90 D 0.90 1.10 E 1.90 2.10 F 3,40 3.60 G 2.90 3,10 H 3.20 3.40 J 0.595 0.605 K 20.50 20.70 L 1.90 2.10 N 10.89 10.91 q 4.90 5.10 R 3.35 3.45 s 1.995 2.005 u 5.90 6.'0 Y 9.90 10.10 NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice.