2406KL-04W-B10 Overview
Key Specifications
Package: Axial
Height: 60 mm
Length: 60 mm
Width: 15 mm
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
Key Features
- RDS(on) = 1.15mΩ ( Typ.) @ VGS = 10V, ID = 3.25A
- Low gate charge ( Typ. 20nC)
- Low Crss ( Typ. 10pF)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
- RoHS compliant
