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IRFH5104PbF
HEXFET® Power MOSFET
VDS RDS(on) max
(@VGS = 10V)
40 3.5 53 1.4 100
V mΩ nC Ω A
PQFN 5X6 mm
Qg (typical) RG (typical) ID
(@Tc(Bottom) = 25°C)
h
Applications
• • • •
Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost Converters
Benefits Lower Conduction Losses Enables better thermal dissipation Increased Reliability Increased Power Density Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability
Note
Features and Benefits
Features Low RDSon (≤ 3.5mΩ) Low Thermal Resistance to PCB (≤ 1.1°C/W) 100% Rg tested Low Profile (≤ 0.