2406KL Datasheet PDF

FEATURES

● 61A, 200V, RDS(on) = 0.041Ω @VGS = 10 V
● Low gate charge ( typical 58 nC)
● Low Crss ( typical 80 pF)
● Fast switching
● 100% avalanche tested
● Improved dv/dt capability TM

DESCRIPTION

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. D { z G{ G DS z z TO-220 FCP Series { S

ABSOLUTE MAXIMUM RATINGS

Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current Gate-Source voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) - Derate above 25°C (Note 2) (Note 1) (Note 1) (Note 3) Parameter - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed (Note 1) FDP61N20 200 61 38.5 244 ±30 1440 61 41.7 4.5 417 3.3 -55 to +150 300 Unit V A A A V mJ A mJ V/ns W W/°C °C °C Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8”...