NSI6611A-Q1 Overview
NSI66x1A-Q1 Single-Channel Isolated Smart Gate Driver Datasheet (EN) 1.1 Product Overview The NSI66x1A is a single-channel reinforced isolated smart gate driver to drive IGBTs and SiC MOSFETs in many applications. It can source and sink 10A peak current. System robustness is supported by 150kV/us minimum mon-mode transient immunity (CMTI).
NSI6611A-Q1 Key Features
- 5.7kVRMSwithstand isolation voltage
- SiC MOSFETs and IGBTs up to 2121Vpk
- Driver side supply voltage: up to 32V with UVLO
- 10A peak source and sink output current
- High CMTI: ±150kV/us
- 200ns fast response time of DESAT
- Monitor status of device on FLT and RDY
- 80ns typical propagation delay
- 400mA soft turn off current
- 40ns maximum pulse width distortion