• Part: NSM2013
  • Description: Hall-Effect-Based Current SensorIC
  • Manufacturer: NOVOSENSE
  • Size: 3.57 MB
Download NSM2013 Datasheet PDF
NOVOSENSE
NSM2013
NSM2013 is Hall-Effect-Based Current SensorIC manufactured by NOVOSENSE.
High-Accuracy, Hall-Effect-Based Current Sensor IC with mon-Mode Field Rejection in 5kV High-Isolation Datasheet (EN) 1.0 Product Overview NSM2013 is an integrated path current sensor with a very low on-resistance of 0.85mΩ, reducing heat loss on the chip. NOVOSENSE innovative isolation technology and signal conditioning design can meet high isolation levels while sensing the current flowing through the internal Busbar. A differential Hall pair is used internally, so it has a strong immunity to external stray magnetic fields. NSM2013 senses the magnetic field generated by the Busbar current flowing under the chip to indirectly detect the current. pared with the current...