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NTE455 - N-Channel Silicon Dual-Gate MOS Field Effect Transistor

General Description

The NTE455 is an N Channel silicon dual

gate MOSFET designed for use as an RF amplifier in UHF TV tuners.

This device is especially recommended for use in half wave length resonator type tuners.

Key Features

  • D Low Reverse Transfer Capacitance: Crss = 0.02pF Typ D High Power Gain: Gps = 18dB Typ D Low Noise Figure: NF = 3.8dB Typ Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Drain.
  • Source Voltage, VDSX.
  • . . 20V Gate1.
  • Source Voltage, VG1S.
  • ±10V Gate2.
  • Source Voltage,.

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Datasheet Details

Part number NTE455
Manufacturer NTE Electronics (defunct)
File Size 105.34 KB
Description N-Channel Silicon Dual-Gate MOS Field Effect Transistor
Datasheet download datasheet NTE455 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com NTE455 N−Channel Silicon Dual−Gate MOS Field Effect Transistor (MOSFET) Description: The NTE455 is an N−Channel silicon dual−gate MOSFET designed for use as an RF amplifier in UHF TV tuners. This device is especially recommended for use in half wave length resonator type tuners. Features: D Low Reverse Transfer Capacitance: Crss = 0.02pF Typ D High Power Gain: Gps = 18dB Typ D Low Noise Figure: NF = 3.8dB Typ Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Drain−Source Voltage, VDSX . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V Gate1−Source Voltage, VG1S . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .