NTE578 Datasheet | NTE Electronics

NTE578 Silicon Rectifier Schottky Barrier, General Purpose Description: The NTE578 is a general purpose rectifier employing the Schottky Barrier principle in a large area metal- to- silicon power diode. State- of- the art geometry Features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low- voltage, high- frequency inverters, free wheeling diodes, and polarity protection diodes. Features : D Low Reverse Current D Low Stored Charge, Majority Carrier Conduction D Low Power Loss/High Efficiency D Highly Stable Oxide Passivated Junction D Guard- Ring for Stress Protection D Low Forward Voltage D 150°C Operating Junction Temperature D...