• Part: NTE583
  • Manufacturer: NTE Electronics
  • Size: 17.70 KB
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NTE583 page 2
Page 2

NTE583 Description

The NTE583 is a metal to silicon junction diode featuring high breakdown, low turn on voltage and ultrafast switching. This device is primarly intented for high level UHF/VHF detection and pulse application with broad dynamic range. (TA = +25°C, Limiting Values) Repetitive Peak Reverse Voltage, VRRM.