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NTE583 - Silicon Rectifier Diode Schottky / RF Switch

General Description

The NTE583 is a metal to silicon junction diode featuring high breakdown, low turn

on voltage and ultrafast switching.

This device is primarly intented for high level UHF/VHF detection and pulse application with broad dynamic range.

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Datasheet Details

Part number NTE583
Manufacturer NTE Electronics (defunct)
File Size 17.70 KB
Description Silicon Rectifier Diode Schottky / RF Switch
Datasheet download datasheet NTE583 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NTE583 Silicon Rectifier Diode Schottky, RF Switch Description: The NTE583 is a metal to silicon junction diode featuring high breakdown, low turn–on voltage and ultrafast switching. This device is primarly intented for high level UHF/VHF detection and pulse application with broad dynamic range. Absolute Maximum Ratings: (TA = +25°C, Limiting Values) Repetitive Peak Reverse Voltage, VRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70V Forward Continuous Current (Figure 1), IF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15mA Surge Non–Repetitive Forward Current (tp ≤ 1s, Figure 1), IFSM . . . . . . . . . . . . . . . . . . . . . . . . 50mA Operating Junction Temperature Range, TJ . . . . . . . . . . .