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NTE6033 - Silicon Power Rectifier Diode / 40 Amp

Key Features

  • D Fast Recovery Time D Low Stored Charge D Available in Cathode.
  • to.
  • Case (NTE6032) or Anode.
  • to.
  • Case (NTE6033) Style Ratings and Characteristics: Average Forward Current (TC = +75°C Max), IF(AV).
  • . . 40A Maximum Repetitive Peak Reverse Voltage (TJ =.
  • 40° to +125°C), VRRM.
  • . 1000V Maximum Non.
  • Repetitive Peak Reverse Voltage (TJ = +25° to +125°C, tp ≤ 5ms), VRSM.

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Datasheet Details

Part number NTE6033
Manufacturer NTE Electronics (defunct)
File Size 23.76 KB
Description Silicon Power Rectifier Diode / 40 Amp
Datasheet download datasheet NTE6033 Datasheet

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Other Datasheets by NTE Electronics (defunct)

Part Number Description
NTE6032 Silicon Power Rectifier Diode / 40 Amp
NTE6036 Silicon Power Rectifier Diode / 85 Amp
NTE6037 Silicon Power Rectifier Diode / 85 Amp
NTE60 Silicon Complementary Transistors High Power Audio / Disk Head Positioner for Linear Applications
NTE6005 Silicon Power Rectifier Diode / 40 Amp

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NTE6032 & NTE6033 Silicon Power Rectifier Diode, 40 Amp Features: D Fast Recovery Time D Low Stored Charge D Available in Cathode–to–Case (NTE6032) or Anode–to–Case (NTE6033) Style Ratings and Characteristics: Average Forward Current (TC = +75°C Max), IF(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40A Maximum Repetitive Peak Reverse Voltage (TJ = –40° to +125°C), VRRM . . . . . . . . . . . . . . . . 1000V Maximum Non–Repetitive Peak Reverse Voltage (TJ = +25° to +125°C, tp ≤ 5ms), VRSM . . 1250V Maximum Reverse Current (At Rated VR), IR TJ = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.1mA TJ = +125°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .