NTE6232 Overview
The NTE6232 uses 2 power diodes in series and the semiconductors are electrically isolated from the metal base, allowing mon heatsinks and pact assemblies to be built. This device is intended for general purpose applications such as battery chargers, welders and plating equipment and where high voltage and high current are required.
NTE6232 Key Features
- 100A Maximum RMS On-State Current, IT(RMS)
- 141A Maximum Repetitive Peak Reverse and Off-State Blocking Voltage, VRRM, VDRM
- 1600V Maximum Non-Repetitive Peak Reverse Voltage, VRSM
- 1700V Maximum Peak Reverse Current (TJ = +125°C), IRRM
- 10mA RMS Isolation Voltage (50Hz, Circuit to Base, All Terminals Shorted, t = 1s), VISO
- 3500V Operating Junction Temperature Range, TJ
- 40° to +150°C Storage Temperature Range, Tstg
- 40° to +150°C Thermal Resistance, Junction-to-Case (Per Module, DC Operation), RthJC
- 0.22°C/W Thermal Resistance, Case-to-Sink (Note 1), RthCS
- 0.1°C/W Note 1. Mounting surface flat, smooth and greased. Electrical Specifications