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NTE63 Silicon NPN Transistor High Gain, Low Noise Amp
Description: The NTE63 is a silicon NPN high frequency transistor designed primarily for use in high–gain, low noise tuned and wiseband small–signal amplifiers and applications requiring fast switching times. Features: D High Current Gain–Bandwidth Product: fT = 5GHz Typ @ f = 1GHz D High Power Gain: Gpe = 12.5dB Min @ f = 1GHz Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12V Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .