NTE63 Overview
Key Specifications
Mount Type: Through Hole
Pins: 2
Height: 0 m
Length: 0 m
Description
The NTE63 is a silicon NPN high frequency transistor designed primarily for use in high–gain, low noise tuned and wiseband small–signal amplifiers and applications requiring fast switching times. Features: D High Current Gain–Bandwidth Product: fT = 5GHz Typ @ f = 1GHz D High Power Gain: Gpe = 12.5dB Min @ f = 1GHz Parameter OFF Characteristics Collector–Emitter Breakdown Voltage Collector–Base Breakdown Voltage Emitter–Base Breakdown Voltage Collector Cutoff Current V(BR)CEO IC = 1mA, IB = 0 V(BR)CBO IC = 0.1mA, IE = 0 V(BR)EBO IE = 0.1mA, IC = 0 ICBO VCB = 15V, IE = 0 12 20 2 – – – – – – – – 50 V V V nA Symbol Test Conditions Min Typ Max Unit.
