NTE65 Overview
Key Specifications
Package: DIP
Mount Type: Through Hole
Pins: 22
Operating Voltage: 5 V
Description
The NTE65 is silicon NPN transistor designed primarily for use in high–gain, low–noise, small–signal amplifier and also used in applications requiring fast switching times. Features: D High Current–Gain Bandwidth Product D Low Noise Figure D High Power Gain Parameter OFF Characteristics Collector–Emitter Breakdown Voltage Collector–Base Breakdown Voltage Emitter–Base Breakdown Voltage Collector Cutoff Current ON Characteristics DC Current Gain hFE VCE = 10V, IC = 14mA 25 – 250 V(BR)CEO IC = 1mA, IB = 0 V(BR)CBO IC = 0.1mA, IE = 0 V(BR)EBO IE = 0.1mA, IC = 0 ICBO VCB = 10V, IE = 0 15 20 3 – – – – – – – – 50 V V V nA Symbol Test Conditions Min Typ Max Unit Electrical Character.
