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NTE66 - MOSFET N-Ch / Enhancement Mode High Speed Switch

General Description

The NTE66 is a TMOS Power FET in a TO220 type package designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers.

Key Features

  • D Lower RDS(ON) D Improved Inductive Ruggedness D Fast Switching Times D Lower Input Capacitance D Extended Safe Operating Area D Improved High Temperature Reliability Absolute Maximum Ratings: Drain.
  • Source Voltage (TJ = +25°C to +150°C), VDSS.
  • . . . . 100V Drain.
  • Gate Voltage (RGS = 1MΩ, TJ = +25°C to +125°C), VDGR.
  • 100V Gate.
  • Source Voltage, VGS.

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Datasheet Details

Part number NTE66
Manufacturer NTE Electronics (defunct)
File Size 26.92 KB
Description MOSFET N-Ch / Enhancement Mode High Speed Switch
Datasheet download datasheet NTE66 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NTE66 MOSFET N–Ch, Enhancement Mode High Speed Switch Description: The NTE66 is a TMOS Power FET in a TO220 type package designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. Features: D Lower RDS(ON) D Improved Inductive Ruggedness D Fast Switching Times D Lower Input Capacitance D Extended Safe Operating Area D Improved High Temperature Reliability Absolute Maximum Ratings: Drain–Source Voltage (TJ = +25°C to +150°C), VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Drain–Gate Voltage (RGS = 1MΩ, TJ = +25°C to +125°C), VDGR . . . . . . . . . . . . . . . . . . . . . . . . . 100V Gate–Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .