NTE6664 Overview
Key Specifications
Pins: 16
Operating Voltage: 5 V
Max Voltage (typical range): 5.5 V
Min Voltage (typical range): 4.5 V
Description
The NTE6664 is a 65,536 Bit, high–speed, dynamic Random Access Memory. Organized as 65,536 one–bit words and fabricated using HMOS high–performance N–Channel silicon–gate technology, this 5V only dynamic RAM combines high performance with low cost and improved reliability.
