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NTE858M - Integrated Circuit Dual / Low-Noise JFET-Input Operational Amplifier

Description

The NTE858M and NTE858SM are dual, low noise JFET input operational amplifiers combining two state of the

art linear technologies on a single monolithic integrated circuit.

Features

  • D Available in Two Different Package Types: 8.
  • Lead Mini DIP (NTE858M) SOIC.
  • 8 Surface Mount (NTE858SM) D Low Input Noise Voltage: 18nV√Hz Typ D Low Harmonic Distortion: 0.01% Typ D Low Input Bias and Offset Currents D High Input Impedance: 1012Ω Typ D High Slew Rate: 13V/µs Typ D Wide Gain Bandwidth: 4MHz Typ D Low Supply Current: 1.4mA per Amp Absolute Maximum Ratings: Supply Voltage VCC.

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Datasheet Details

Part number NTE858M
Manufacturer NTE Electronics (defunct)
File Size 28.17 KB
Description Integrated Circuit Dual / Low-Noise JFET-Input Operational Amplifier
Datasheet download datasheet NTE858M Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NTE858M NTE858SM Integrated Circuit Dual, Low–Noise JFET–Input Operational Amplifier Description: The NTE858M and NTE858SM are dual, low–noise JFET input operational amplifiers combining two state–of–the–art linear technologies on a single monolithic integrated circuit. Each internally compensated operational amplifier has well matched high voltage JFET input devices for low input offset voltage. The BIFET technology provides wide bandwidths and fast slew rates with low input bias currents, input offset currents, and supply currents. Moreover, these devices exhibit low–noise and low harmonic distortion making them ideal for use in high–fidelity audio amplifier applications.
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